Panjit PJP35N06A_T0_00001

安装类型

THT

包装/外壳

TO-220AB-3

供应商器件包装

TO-220AB

MSL

n/a

RoHS

有

Vds - Drain-Source Breakdown Voltage

60 V

Typical Turn-On Delay Time

7.2 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

104 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.066680 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

50

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

Panjit

Brand

Panjit

Qg - Gate Charge

28 nC

Rds On - Drain-Source Resistance

24 mOhms

Typical Turn-Off Delay Time

34 ns

Id - Continuous Drain Current

35 A

Package

Tube

Current - Continuous Drain (Id) @ 25℃

4.7A (Ta), 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

Panjit International Inc.

Power Dissipation (Max)

2W (Ta), 104W (Tc)

Product Status

不用于新设计

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.5V @ 250µA

操作温度

0...+70°C

系列

LT

包装

Tube

子类别

MOSFETs

技术

Si

频率

100kHz

输出电压

2V...+50V

输出类型

可调式

配置

Single

注意

-

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

21mOhm @ 20A, 10V

输入电容(Ciss)(Max)@Vds

1680 pF @ 20 V

门极电荷(Qg)(最大)@Vgs

28 nC @ 10 V

上升时间

38 ns

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

输入电压

8V...+45V

产品类别

MOSFET