Panjit PJP7NA60_T0_00001

包装/外壳

TO-220AB-3

安装类型

通孔

供应商器件包装

TO-220AB

MSL

-

Dimensions

5x5x3,3mm

RoHS

有

Vds - Drain-Source Breakdown Voltage

600 V

Typical Turn-On Delay Time

28 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

145 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.068784 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

50

Mounting Styles

通孔

Channel Mode

Enhancement

Manufacturer

Panjit

Brand

Panjit

Qg - Gate Charge

15.2 nC

Rds On - Drain-Source Resistance

1.2 Ohms

Typical Turn-Off Delay Time

42 ns

Id - Continuous Drain Current

7 A

Package

Tube

Current - Continuous Drain (Id) @ 25℃

7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

Panjit International Inc.

Power Dissipation (Max)

145W (Tc)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 250µA

操作温度

-25...+70°C

系列

PT10M

包装

Tube

容差

±20 %

类型

Trimmer

电阻

1 000 Ohm

组成

Carbon

子类别

MOSFETs

技术

Si

终端样式

THT

配置

Single

注意

-

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.2Ohm @ 3.5A, 10V

输入电容(Ciss)(Max)@Vds

723 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

15.2 nC @ 10 V

上升时间

58 ns

漏源电压 (Vdss)

600 V

Vgs（最大值）

±30V

产品类别

MOSFET

晶体管类型

1 N-Channel

转弯数量

1

场效应管特性

-

额定功率

0,1 W

产品类别

MOSFET