Philips Semiconductors BLF147
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BLF147
1891-BLF147
晶体管 - 特殊用途
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
1最小包装量--
BLF147详情
Philips Semiconductors BLF147重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
NO
质量
60 g
外壳材料
1
Rohs Code
有
Part Life Cycle Code
Transferred
Ihs Manufacturer
飞利浦半导体
Drain Current-Max (ID)
25 A
Operating Temperature-Max
200 °C
Gross weight
16.50
Transport packaging size/quantity
28.5*21*19/200
Mounting method
magnet
Operating frequency range
1575-1602 MHz
Noise level
1.5 dB
For Use With/Related Products
Cable Ties 50-250 lb
Operating temperature
-40...+85 °C
包装
Box
零件状态
活跃
ECCN 代码
EAR99
Connector type
MMCX
类型
Gun
深度
27 mm
Reach合规守则
unknown
配置
SINGLE
极化
circular
阻抗
50 Ohm
Cable length
100 mm
操作模式
增强型MOSFET
极性/通道类型
N-CHANNEL
增益
28 dBi
场效应管技术
METAL-OXIDE SEMICONDUCTOR
Antenna type
Active GPS/ Glonass internal antenna
最大耗散功率(Abs)
220 W
电压驻波比
≤1.5
特征
Adjustable Tension, Ergonomic, Flush Cut
高度
8.2 mm
宽度
27 mm
BLF147拓展信息
Philips Semiconductors
Philips Semiconductors
Philips Semiconductors
Philips Semiconductors
Philips Semiconductors
North American Philips Discrete Products Div
Philips Semiconductors
North American Philips Discrete Products Div
Philips Semiconductors
North American Philips Discrete Products Div







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