Philips Semiconductors BSH112

表面安装

YES

外壳材料

1

Gross weight

105.00

Transport packaging size/quantity

39.5*29.5*19/50

Load voltage

~440 V

Operating ambient temperature

-20…+50 (non-condensing) °C

Dielectric strength

2500 (50 Hz / 1 min) V

Operating Temperature-Max

150 °C

Drain Current-Max (ID)

0.3 A

Ihs Manufacturer

飞利浦半导体

Part Life Cycle Code

Transferred

Rohs Code

有

JESD-609代码

e3

ECCN 代码

EAR99

类型

Single-phase solid state relay of SSR-1 series

端子表面处理

哑光锡

峰值回流焊温度（摄氏度）

260

深度

57.4 mm

Reach合规守则

unknown

配置

SINGLE

Insulation resistance

≥1000 (at Udc=500V) MOhm

Leakage current

20-50 mA

操作模式

增强型MOSFET

Control mode

R - with instantaneous (random) turn-on

极性/通道类型

N-CHANNEL

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

0.83 W

Load current

60 A

Control voltage

90...240 (AC) V

Switching time

≤10 ms

饱和电流

1

宽度

44.8 mm

高度

28 (without cover) mm