Philips Semiconductors IRFR220
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IRFR220
1891-IRFR220
晶体管 - 特殊用途
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Description: Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
1最小包装量--
IRFR220详情
Philips Semiconductors IRFR220重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
外壳材料
1
Drain Current-Max (ID)
4.8 A
Operating Temperature-Max
150 °C
Ihs Manufacturer
飞利浦半导体
Part Life Cycle Code
Transferred
Rohs Code
有
Gross weight
120 g
Mechanical mounting
screw
Electrical mounting
screw
Gate current
100mA
Max. forward impulse current
1.5kA
Max. forward voltage
1.75V
Case
SEMIPACK1
Max. off-state voltage
1.6kV
Semiconductor structure
double series
Type of module
diode-thyristor
ECCN 代码
EAR99
峰值回流焊温度(摄氏度)
260
Reach合规守则
not_compliant
配置
SINGLE
操作模式
增强型MOSFET
极性/通道类型
N-CHANNEL
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
42 W
Load current
55A
饱和电流
1
IRFR220拓展信息
North American Philips Discrete Products Div
Philips Semiconductors
Philips Semiconductors
Philips Semiconductors
Philips Semiconductors
North American Philips Discrete Products Div
Philips Semiconductors
North American Philips Discrete Products Div
North American Philips Discrete Products Div
Philips Semiconductors







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