Philips Semiconductors IRFZ44N
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IRFZ44N
1891-IRFZ44N
晶体管 - 特殊用途
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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IRFZ44N详情
Philips Semiconductors IRFZ44N重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
NO
材料
housing - stainless steel; insulator - LCP UL94V-0; contacts - Cu-alloy with coating
外壳材料
1
Dielectric strength
100 V
Maximum voltage
20 V
Number of switching cycles (electrical)
10000 times minimum
Gross weight
1.75
Transport packaging size/quantity
41*29*22.8/1200
Rohs Code
有
Part Life Cycle Code
Transferred
Ihs Manufacturer
飞利浦半导体
Drain Current-Max (ID)
49 A
Operating Temperature-Max
175 °C
JESD-609代码
e3
ECCN 代码
EAR99
连接器类型
USB 3.1 type C socket (vertical orientation - straight) with cover
端子表面处理
Matte Tin (Sn)
深度
7 (with cover) mm
Reach合规守则
unknown
Number of contacts
24
Contact resistance
40 mOhm maximum
配置
SINGLE
Insulation resistance
100 MOhm minimum
操作模式
增强型MOSFET
极性/通道类型
N-CHANNEL
Operating temperature range
-55…+85 °C
Rated current
5 (VBUS) max; 1.25 (GND); 0.25 (others) A
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
110 W
Rated voltage
5 V
高度
9.3 (housing) mm
宽度
8.94 (housing); 11 (with cover) mm
IRFZ44N拓展信息
North American Philips Discrete Products Div
Philips Semiconductors
Philips Semiconductors
Philips Semiconductors
Philips Semiconductors
Philips Semiconductors
Philips Semiconductors
Philips Semiconductors
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