Philips Semiconductors IRFZ44N
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IRFZ44N
1891-IRFZ44N
晶体管 - 特殊用途
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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IRFZ44N详情
Philips Semiconductors IRFZ44N重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
NO
材料
housing - stainless steel; insulator - LCP UL94V-0; contacts - Cu-alloy with coating
外壳材料
1
Dielectric strength
100 V
Maximum voltage
20 V
Number of switching cycles (electrical)
10000 times minimum
Gross weight
1.75
Transport packaging size/quantity
41*29*22.8/1200
Rohs Code
有
Part Life Cycle Code
Transferred
Ihs Manufacturer
飞利浦半导体
Drain Current-Max (ID)
49 A
Operating Temperature-Max
175 °C
JESD-609代码
e3
ECCN 代码
EAR99
连接器类型
USB 3.1 type C socket (vertical orientation - straight) with cover
端子表面处理
Matte Tin (Sn)
深度
7 (with cover) mm
Reach合规守则
unknown
Number of contacts
24
Contact resistance
40 mOhm maximum
配置
SINGLE
Insulation resistance
100 MOhm minimum
操作模式
增强型MOSFET
极性/通道类型
N-CHANNEL
Operating temperature range
-55…+85 °C
Rated current
5 (VBUS) max; 1.25 (GND); 0.25 (others) A
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
110 W
Rated voltage
5 V
高度
9.3 (housing) mm
宽度
8.94 (housing); 11 (with cover) mm
IRFZ44N拓展信息
North American Philips Discrete Products Div
Philips Semiconductors
Philips Semiconductors
Philips Semiconductors
Philips Semiconductors
North American Philips Discrete Products Div
Philips Semiconductors
North American Philips Discrete Products Div
North American Philips Discrete Products Div
Philips Semiconductors







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