Philips Semiconductors PHN210
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PHN210
1891-PHN210
晶体管 - 特殊用途
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Description: Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
1最小包装量--
PHN210详情
Philips Semiconductors PHN210重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
Rohs Code
有
Part Life Cycle Code
Transferred
Ihs Manufacturer
飞利浦半导体
Package Description
,
Drain Current-Max (ID)
3.5 A
Operating Temperature-Max
150 °C
Gross weight
34.00
Transport packaging size/quantity
42*28*23.5/250
Maximum current
10 A
Maximum voltage
250 V
JESD-609代码
e4
ECCN 代码
EAR99
Connector type
straight; contact Ф - 4 mm
类型
Test probes for digital testers DT
端子表面处理
Nickel/Palladium/Gold (Ni/Pd/Au)
Reach合规守则
unknown
操作模式
增强型MOSFET
极性/通道类型
N-CHANNEL
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
2 W
长度
contact - 15; probe - 105; total - 700 mm
PHN210拓展信息
Philips Semiconductors
Philips Semiconductors
Philips Semiconductors
Philips Semiconductors
Philips Semiconductors
North American Philips Discrete Products Div
Philips Semiconductors
North American Philips Discrete Products Div
Philips Semiconductors
North American Philips Discrete Products Div







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