Renesas Electronics America Inc 2SK2225-80-E#T2

安装类型

通孔

包装/外壳

TO-220-3 Full Pack

表面安装

NO

引脚数

3

供应商器件包装

TO-3PFM

终端数量

3

晶体管元件材料

SILICON

厂商

Renesas Electronics America Inc

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

15V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 1mA

Power Dissipation (Max)

50W (Tc)

Continuous Drain Current Id

2

MSL

MSL 1 - Unlimited

Qualification

-

Vds - Drain-Source Breakdown Voltage

1.5 kV

Typical Turn-On Delay Time

17 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

50 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Factory Pack QuantityFactory Pack Quantity

25

Mounting Styles

通孔

Forward Transconductance - Min

0.45 S

Channel Mode

Enhancement

Manufacturer

Renesas Electronics

Brand

Renesas Electronics

Rds On - Drain-Source Resistance

12 Ohms

RoHS

Details

Typical Turn-Off Delay Time

150 ns

Id - Continuous Drain Current

2 A

Package Description

FLANGE MOUNT, R-PSFM-T3

Package Style

FLANGE MOUNT

Package Body Material

PLASTIC/EPOXY

Manufacturer Package Code

PRSS0003ZD-A3

Reflow Temperature-Max (s)

未说明

Manufacturer Part Number

2SK2225-80-E#T2

Package Shape

RECTANGULAR

Number of Elements

1

Part Life Cycle Code

活跃

Samacsys Description

General Purpose Power MOSFETs Nch Single Power MOSFET 1500V 2A 12000mohm TO-3PF

Ihs Manufacturer

RENESAS ELECTRONICS CORP

Risk Rank

5.74

Part Package Code

TO-3PF

Drain Current-Max (ID)

2 A

操作温度

150°C

包装

Tube

子类别

MOSFETs

端子位置

SINGLE

终端形式

THROUGH-HOLE

峰值回流焊温度（摄氏度）

未说明

JESD-30代码

R-PSFM-T3

Brand Name

Renesas

配置

SINGLE WITH BUILT-IN DIODE

通道数量

1 Channel

操作模式

增强型MOSFET

功率耗散

50

箱体转运

ISOLATED

场效应管类型

N-Channel

晶体管应用

SWITCHING

Rds On(Max)@Id,Vgs

12Ohm @ 1A, 15V

输入电容(Ciss)(Max)@Vds

990 pF @ 10 V

上升时间

50 ns

漏源电压 (Vdss)

1500 V

Vgs（最大值）

±20V

极性/通道类型

N-CHANNEL

产品类别

MOSFET

晶体管类型

1 N-Channel

漏极-源极导通最大电阻

12 Ω

脉冲漏极电流-最大值(IDM)

7 A

DS 击穿电压-最小值

1500 V

信道型

N

场效应管技术

METAL-OXIDE SEMICONDUCTOR

场效应管特性

-

产品类别

MOSFET

宽度

15.5 mm

高度

5.5 mm

长度

26.5 mm

达到SVHC

compliant