Rochester Electronics 2N5953_Q
- 收藏
- 对比
2N5953_Q
2071-2N5953_Q
晶体管 - FET,MOSFET - 单个
--
大陆
立即发货

2N5953_Q datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Rochester Electronics stock available at utmel
1最小包装量--
2N5953_Q详情
Rochester Electronics 2N5953_Q重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
Non-Compliant
包装
Bulk
最高工作温度
150 °C
最小工作温度
-55 °C
最大功率耗散
200 mW
元素配置
Single
功率耗散
200 mW
漏源电压 (Vdss)
15 V
连续放电电流(ID)
5 mA
栅极至源极电压(Vgs)
30 V
漏源击穿电压
15 V
漏源电阻
1.2 Ω
2N5953_Q拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics







哦! 它是空的。