Rochester Electronics FDS6612A
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FDS6612A
2071-FDS6612A
晶体管 - FET,MOSFET - 单个
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大陆
立即发货

8400mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8
1最小包装量--
FDS6612A详情
Rochester Electronics FDS6612A重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
引脚数
8
Voltage Rating (DC)
30 V
额定电流
8.4 A
功率耗散
2.5 W
漏源电压 (Vdss)
30 V
连续放电电流(ID)
8.4 A
漏源击穿电压
30 V
无铅
无铅
FDS6612A拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics







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