Rochester Electronics, LLC BSC240N12NS3 G
- 收藏
- 对比
BSC240N12NS3 G
2071-BSC240N12NS3 G
晶体管 - FET,MOSFET - 单个
8-PowerTDFN
大陆
立即发货

N-CHANNEL POWER MOSFET
1最小包装量--
BSC240N12NS3 G详情
Rochester Electronics, LLC BSC240N12NS3 G重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
8-PowerTDFN
供应商器件包装
PG-TDSON-8-1
Current - Continuous Drain (Id) @ 25℃
37A Tc
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
66W Tc
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
4V @ 35μA
操作温度
-55°C~150°C TJ
包装
Tape & Reel (TR)
系列
OptiMOS™
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
24mOhm @ 31A, 10V
输入电容(Ciss)(Max)@Vds
1900pF @ 60V
门极电荷(Qg)(最大)@Vgs
27nC @ 10V
漏源电压 (Vdss)
120V
Vgs(最大值)
±20V
RoHS状态
Non-RoHS Compliant
BSC240N12NS3 G拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics








哦! 它是空的。