Rochester Electronics, LLC BSC884N03MS G
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BSC884N03MS G
2071-BSC884N03MS G
晶体管 - FET,MOSFET - 单个
8-PowerTDFN
大陆
立即发货

N-CHANNEL POWER MOSFET
1最小包装量--
BSC884N03MS G详情
Rochester Electronics, LLC BSC884N03MS G重要参数规格及、参数值,及相似型号如下:
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- 参数名参数值全选
包装/外壳
8-PowerTDFN
安装类型
表面贴装
供应商器件包装
PG-TDSON-8-1
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
2V @ 250μA
Power Dissipation (Max)
2.5W Ta 50W Tc
Drive Voltage (Max Rds On, Min Rds On)
4.5V 10V
Current - Continuous Drain (Id) @ 25℃
17A Ta 85A Tc
系列
OptiMOS™
包装
Tape & Reel (TR)
操作温度
-55°C~150°C TJ
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
4.5mOhm @ 30A, 10V
输入电容(Ciss)(Max)@Vds
2700pF @ 15V
门极电荷(Qg)(最大)@Vgs
34nC @ 10V
漏源电压 (Vdss)
34V
Vgs(最大值)
±20V
RoHS状态
Non-RoHS Compliant
BSC884N03MS G拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics








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