Rochester Electronics, LLC FDB42AN15A0
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FDB42AN15A0
2071-FDB42AN15A0
晶体管 - FET,MOSFET - 单个
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
大陆
立即发货

N-CHANNEL POWER MOSFET
1最小包装量--
FDB42AN15A0详情
Rochester Electronics, LLC FDB42AN15A0重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
安装类型
表面贴装
供应商器件包装
TO-263AB
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
4V @ 250μA
Power Dissipation (Max)
150W Tc
Drive Voltage (Max Rds On, Min Rds On)
6V 10V
Current - Continuous Drain (Id) @ 25℃
5A Ta 35A Tc
系列
PowerTrench®
包装
Tape & Reel (TR)
操作温度
-55°C~175°C TJ
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
42mOhm @ 12A, 10V
输入电容(Ciss)(Max)@Vds
2.15pF @ 25V
门极电荷(Qg)(最大)@Vgs
39nC @ 10V
漏源电压 (Vdss)
150V
Vgs(最大值)
±20V
RoHS状态
ROHS3 Compliant
FDB42AN15A0拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics








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