Rochester Electronics, LLC FDB5690
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FDB5690
2071-FDB5690
晶体管 - FET,MOSFET - 单个
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
大陆
立即发货

N-CHANNEL POWER MOSFET
1最小包装量--
FDB5690详情
Rochester Electronics, LLC FDB5690重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
供应商器件包装
TO-263AB
Current - Continuous Drain (Id) @ 25℃
32A Tc
Drive Voltage (Max Rds On, Min Rds On)
6V 10V
Power Dissipation (Max)
58W Tc
操作温度
-65°C~175°C TJ
包装
Tape & Reel (TR)
系列
PowerTrench®
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
27mOhm @ 16A, 10V
不同 Id 时 Vgs(th)(最大值)
4V @ 250μA
输入电容(Ciss)(Max)@Vds
1.12pF @ 25V
门极电荷(Qg)(最大)@Vgs
33nC @ 10V
漏源电压 (Vdss)
60V
Vgs(最大值)
±20V
RoHS状态
ROHS3 Compliant
FDB5690拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics








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