Rochester Electronics, LLC FDFMA2P859T
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FDFMA2P859T
2071-FDFMA2P859T
晶体管 - FET,MOSFET - 单个
6-UDFN Exposed Pad
大陆
立即发货

P-CHANNEL POWER MOSFET
1最小包装量--
FDFMA2P859T详情
Rochester Electronics, LLC FDFMA2P859T重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
6-UDFN Exposed Pad
供应商器件包装
MicroFET 2x2 Thin
Current - Continuous Drain (Id) @ 25℃
3A Ta
Drive Voltage (Max Rds On, Min Rds On)
1.8V 4.5V
Power Dissipation (Max)
1.4W Ta
操作温度
-55°C~150°C TJ
包装
Tape & Reel (TR)
系列
PowerTrench®
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
P-Channel
Rds On(Max)@Id,Vgs
120mOhm @ 3A, 4.5V
不同 Id 时 Vgs(th)(最大值)
1.3V @ 250μA
输入电容(Ciss)(Max)@Vds
435pF @ 10V
门极电荷(Qg)(最大)@Vgs
6nC @ 4.5V
漏源电压 (Vdss)
20V
Vgs(最大值)
±8V
场效应管特性
Schottky Diode (Isolated)
RoHS状态
ROHS3 Compliant
FDFMA2P859T拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics







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