Rochester Electronics, LLC FDM606P
- 收藏
- 对比
FDM606P
2071-FDM606P
晶体管 - FET,MOSFET - 单个
8-SMD, Flat Lead Exposed Pad
大陆
立即发货

P-CHANNEL POWER MOSFET
1最小包装量--
FDM606P详情
Rochester Electronics, LLC FDM606P重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
8-SMD, Flat Lead Exposed Pad
供应商器件包装
8-MLP, MicroFET (3x2)
Current - Continuous Drain (Id) @ 25℃
6.8A Tc
Drive Voltage (Max Rds On, Min Rds On)
1.8V 4.5V
Power Dissipation (Max)
1.92W Ta
操作温度
-55°C~150°C TJ
包装
Tape & Reel (TR)
系列
PowerTrench®
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
P-Channel
Rds On(Max)@Id,Vgs
30mOhm @ 6.8A, 4.5V
不同 Id 时 Vgs(th)(最大值)
1.5V @ 250μA
输入电容(Ciss)(Max)@Vds
2.2pF @ 10V
门极电荷(Qg)(最大)@Vgs
30nC @ 4.5V
漏源电压 (Vdss)
20V
Vgs(最大值)
±8V
RoHS状态
ROHS3 Compliant
FDM606P拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics







哦! 它是空的。