Rochester Electronics LLC FDS4435BZ
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FDS4435BZ
2071-FDS4435BZ
晶体管 - 特殊用途
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大陆
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Description: 8800mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8
1最小包装量--
FDS4435BZ详情
Rochester Electronics LLC FDS4435BZ重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
终端数量
8
晶体管元件材料
SILICON
外壳材料
1
Rohs Code
有
Part Life Cycle Code
活跃
Ihs Manufacturer
ROCHESTER ELECTRONICS LLC
Part Package Code
SOT
Package Description
ROHS COMPLIANT, SOP-8
Drain Current-Max (ID)
8.8 A
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
小概要
Gross weight
5.44
Transport packaging size/quantity
42*28*18.5/1000
Mounting method
on panel, on latches
Number of switching cycles (electric)
≥10000
Nominal current
2.5 A
Nominal voltage
250 V
Dielectric strength
2000 (50 Hz / 1 min.) V
Operating ambient temperature
-25…+70 °C
JESD-609代码
e3
无铅代码
有
Connector type
C8A
类型
2-pole plug block
端子表面处理
哑光锡
颜色
black
端子位置
DUAL
终端形式
鸥翼
峰值回流焊温度(摄氏度)
260
Reach合规守则
unknown
时间@峰值回流温度-最大值(s)
30
引脚数量
8
JESD-30代码
R-PDSO-G8
资历状况
COMMERCIAL
Number of contacts
2
配置
SINGLE WITH BUILT-IN DIODE
Insulation resistance
≥100 (at Uins.dc=500V) MOhm
注意
IEC 60320 (C8A)
操作模式
增强型MOSFET
晶体管应用
SWITCHING
极性/通道类型
P-CHANNEL
漏极-源极导通最大电阻
0.02 Ω
DS 击穿电压-最小值
30 V
场效应管技术
METAL-OXIDE SEMICONDUCTOR
反馈上限-最大值 (Crss)
345 pF
饱和电流
1
FDS4435BZ拓展信息
Rochester Electronics LLC
Rochester Electronics LLC
Rochester Electronics LLC
Rochester Electronics LLC
Rochester Electronics LLC
Rochester Electronics LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics







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