Rochester Electronics, LLC FDS6680S
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FDS6680S
2071-FDS6680S
晶体管 - FET,MOSFET - 单个
8-SOIC (0.154, 3.90mm Width)
大陆
立即发货

SMALL SIGNAL N-CHANNEL MOSFET
1最小包装量--
FDS6680S详情
Rochester Electronics, LLC FDS6680S重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
8-SOIC (0.154, 3.90mm Width)
供应商器件包装
8-SOIC
Current - Continuous Drain (Id) @ 25℃
11.5A Ta
Drive Voltage (Max Rds On, Min Rds On)
4.5V 10V
Power Dissipation (Max)
2.5W Ta
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
3V @ 250μA
操作温度
-55°C~150°C TJ
包装
Tape & Reel (TR)
系列
PowerTrench®
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
11mOhm @ 11.5A, 10V
输入电容(Ciss)(Max)@Vds
2.01pF @ 15V
门极电荷(Qg)(最大)@Vgs
24nC @ 5V
漏源电压 (Vdss)
30V
Vgs(最大值)
±20V
RoHS状态
ROHS3 Compliant
FDS6680S拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics








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