Rochester Electronics, LLC FQB7N65CTM
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FQB7N65CTM
2071-FQB7N65CTM
晶体管 - FET,MOSFET - 单个
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
大陆
立即发货

N-CHANNEL POWER MOSFET
1最小包装量--
FQB7N65CTM详情
Rochester Electronics, LLC FQB7N65CTM重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
供应商器件包装
D2PAK (TO-263AB)
Current - Continuous Drain (Id) @ 25℃
7A Tc
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
173W Tc
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
4V @ 250μA
操作温度
-55°C~150°C TJ
包装
Tape & Reel (TR)
系列
QFET®
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
1.4Ohm @ 3.5A, 10V
输入电容(Ciss)(Max)@Vds
1.245pF @ 25V
门极电荷(Qg)(最大)@Vgs
36nC @ 10V
漏源电压 (Vdss)
650V
Vgs(最大值)
±30V
RoHS状态
ROHS3 Compliant
FQB7N65CTM拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics








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