Rochester Electronics, LLC FQD2N60CTF
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FQD2N60CTF
2071-FQD2N60CTF
晶体管 - FET,MOSFET - 单个
TO-252-3, DPak (2 Leads + Tab), SC-63
大陆
立即发货

POWER, N-CHANNEL, MOSFET
1最小包装量--
FQD2N60CTF详情
Rochester Electronics, LLC FQD2N60CTF重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-252-3, DPak (2 Leads + Tab), SC-63
供应商器件包装
D-Pak
Current - Continuous Drain (Id) @ 25℃
1.9A Tc
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
2.5W Ta 44W Tc
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
4V @ 250μA
操作温度
-55°C~150°C TJ
包装
Tape & Reel (TR)
系列
QFET®
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
4.7Ohm @ 950mA, 10V
输入电容(Ciss)(Max)@Vds
235pF @ 25V
门极电荷(Qg)(最大)@Vgs
12nC @ 10V
漏源电压 (Vdss)
600V
Vgs(最大值)
±30V
RoHS状态
ROHS3 Compliant
FQD2N60CTF拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics








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