Rochester Electronics, LLC FQD3N50CTF
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FQD3N50CTF
2071-FQD3N50CTF
晶体管 - FET,MOSFET - 单个
TO-252-3, DPak (2 Leads + Tab), SC-63
大陆
立即发货

N-CHANNEL POWER MOSFET
1最小包装量--
FQD3N50CTF详情
Rochester Electronics, LLC FQD3N50CTF重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-252-3, DPak (2 Leads + Tab), SC-63
供应商器件包装
D-Pak
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
4V @ 250μA
Current - Continuous Drain (Id) @ 25℃
2.5A Tc
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
35W Tc
系列
QFET®
操作温度
-55°C~150°C TJ
包装
Tape & Reel (TR)
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
2.5Ohm @ 1.25A, 10V
输入电容(Ciss)(Max)@Vds
365pF @ 25V
门极电荷(Qg)(最大)@Vgs
13nC @ 10V
漏源电压 (Vdss)
500V
Vgs(最大值)
±30V
RoHS状态
ROHS3 Compliant
FQD3N50CTF拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics








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