Rochester Electronics, LLC FQD4N50TM
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FQD4N50TM
2071-FQD4N50TM
晶体管 - FET,MOSFET - 单个
TO-252-3, DPak (2 Leads + Tab), SC-63
大陆
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POWER FIELD-EFFECT TRANSISTOR
1最小包装量--
FQD4N50TM详情
Rochester Electronics, LLC FQD4N50TM重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-252-3, DPak (2 Leads + Tab), SC-63
引脚数
3
Current - Continuous Drain (Id) @ 25℃
2.6A Tc
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
2.5W Ta 45W Tc
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
5V @ 250μA
操作温度
-55°C~150°C TJ
包装
Tape & Reel (TR)
系列
QFET®
无铅代码
yes
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
2.7 Ω @ 1.3A, 10V
输入电容(Ciss)(Max)@Vds
460pF @ 25V
门极电荷(Qg)(最大)@Vgs
13nC @ 10V
漏源电压 (Vdss)
500V
Vgs(最大值)
±30V
RoHS状态
ROHS3 Compliant
FQD4N50TM拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics








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