Rochester Electronics, LLC FQI32N20CTU
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FQI32N20CTU
2071-FQI32N20CTU
晶体管 - FET,MOSFET - 单个
TO-262-3 Long Leads, I2Pak, TO-262AA
大陆
立即发货

POWER, N-CHANNEL, MOSFET
1最小包装量--
FQI32N20CTU详情
Rochester Electronics, LLC FQI32N20CTU重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-262-3 Long Leads, I2Pak, TO-262AA
安装类型
通孔
供应商器件包装
I2PAK (TO-262)
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
4V @ 250μA
Power Dissipation (Max)
3.13W Ta 156W Tc
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25℃
28A Tc
系列
QFET®
包装
Tube
操作温度
-55°C~150°C TJ
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
82mOhm @ 14A, 10V
输入电容(Ciss)(Max)@Vds
2.22pF @ 25V
门极电荷(Qg)(最大)@Vgs
110nC @ 10V
漏源电压 (Vdss)
200V
Vgs(最大值)
±30V
RoHS状态
ROHS3 Compliant
FQI32N20CTU拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics







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