Rochester Electronics, LLC FQI3P20TU
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FQI3P20TU
2071-FQI3P20TU
晶体管 - FET,MOSFET - 单个
TO-262-3 Long Leads, I2Pak, TO-262AA
大陆
立即发货

P-CHANNEL POWER MOSFET
1最小包装量--
FQI3P20TU详情
Rochester Electronics, LLC FQI3P20TU重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
通孔
包装/外壳
TO-262-3 Long Leads, I2Pak, TO-262AA
供应商器件包装
I2PAK (TO-262)
Current - Continuous Drain (Id) @ 25℃
2.8A Tc
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
3.13W Ta 52W Tc
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
5V @ 250μA
操作温度
-55°C~150°C TJ
包装
Tube
系列
QFET®
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
P-Channel
Rds On(Max)@Id,Vgs
2.7Ohm @ 1.4A, 10V
输入电容(Ciss)(Max)@Vds
250pF @ 25V
门极电荷(Qg)(最大)@Vgs
8nC @ 10V
漏源电压 (Vdss)
200V
Vgs(最大值)
±30V
RoHS状态
ROHS3 Compliant
FQI3P20TU拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics







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