Rochester Electronics, LLC FQP11N50CF
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FQP11N50CF
2071-FQP11N50CF
晶体管 - FET,MOSFET - 单个
TO-220-3
大陆
立即发货

N-CHANNEL POWER MOSFET
1最小包装量--
FQP11N50CF详情
Rochester Electronics, LLC FQP11N50CF重要参数规格及、参数值,及相似型号如下:
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- 参数名参数值全选
安装类型
通孔
包装/外壳
TO-220-3
供应商器件包装
TO-220-3
Current - Continuous Drain (Id) @ 25℃
11A Tc
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
195W Tc
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
4V @ 250μA
操作温度
-55°C~150°C TJ
包装
Tube
系列
FRFET®
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
550mOhm @ 5.5A, 10V
输入电容(Ciss)(Max)@Vds
2.055pF @ 25V
门极电荷(Qg)(最大)@Vgs
55nC @ 10V
漏源电压 (Vdss)
500V
Vgs(最大值)
±30V
RoHS状态
Non-RoHS Compliant
FQP11N50CF拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics







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