Rochester Electronics, LLC FQPF4N50
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FQPF4N50
2071-FQPF4N50
晶体管 - FET,MOSFET - 单个
TO-220-3 Full Pack
大陆
立即发货

N-CHANNEL POWER MOSFET
1最小包装量--
FQPF4N50详情
Rochester Electronics, LLC FQPF4N50重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
通孔
包装/外壳
TO-220-3 Full Pack
供应商器件包装
TO-220F
Current - Continuous Drain (Id) @ 25℃
2.3A Tc
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
35W Tc
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
5V @ 250μA
操作温度
-55°C~150°C TJ
包装
Tube
系列
QFET®
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
2.7Ohm @ 1.15A, 10V
输入电容(Ciss)(Max)@Vds
460pF @ 25V
门极电荷(Qg)(最大)@Vgs
13nC @ 10V
漏源电压 (Vdss)
500V
Vgs(最大值)
±30V
RoHS状态
ROHS3 Compliant
FQPF4N50拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics








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