Rochester Electronics, LLC FQPF5N30
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FQPF5N30
2071-FQPF5N30
晶体管 - FET,MOSFET - 单个
TO-220-3 Full Pack
大陆
立即发货

N-CHANNEL POWER MOSFET
1最小包装量--
FQPF5N30详情
Rochester Electronics, LLC FQPF5N30重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
通孔
包装/外壳
TO-220-3 Full Pack
供应商器件包装
TO-220F
Current - Continuous Drain (Id) @ 25℃
3.9A Tc
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
35W Tc
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
5V @ 250μA
操作温度
-55°C~150°C TJ
包装
Tube
系列
QFET®
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
900mOhm @ 1.95A, 10V
输入电容(Ciss)(Max)@Vds
430pF @ 25V
门极电荷(Qg)(最大)@Vgs
13nC @ 10V
漏源电压 (Vdss)
300V
Vgs(最大值)
±30V
RoHS状态
ROHS3 Compliant
FQPF5N30拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics








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