Rochester Electronics, LLC FQU1N50TU
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FQU1N50TU
2071-FQU1N50TU
晶体管 - FET,MOSFET - 单个
TO-251-3 Short Leads, IPak, TO-251AA
大陆
立即发货

N-CHANNEL POWER MOSFET
1最小包装量--
FQU1N50TU详情
Rochester Electronics, LLC FQU1N50TU重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
通孔
包装/外壳
TO-251-3 Short Leads, IPak, TO-251AA
供应商器件包装
I-PAK
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
2.5W Ta 25W Tc
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
5V @ 250μA
Current - Continuous Drain (Id) @ 25℃
1.1A Tc
操作温度
-55°C~150°C TJ
包装
Tube
系列
QFET®
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
9Ohm @ 550mA, 10V
输入电容(Ciss)(Max)@Vds
150pF @ 25V
门极电荷(Qg)(最大)@Vgs
5.5nC @ 10V
漏源电压 (Vdss)
500V
Vgs(最大值)
±30V
RoHS状态
ROHS3 Compliant
FQU1N50TU拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics








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