Rochester Electronics, LLC HAT2165N-EL-E
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HAT2165N-EL-E
2071-HAT2165N-EL-E
晶体管 - FET,MOSFET - 单个
8-PowerSOIC (0.154, 3.90mm Width)
大陆
立即发货

POWER, 55A, 30V, N-CH MOSFET
1最小包装量--
HAT2165N-EL-E详情
Rochester Electronics, LLC HAT2165N-EL-E重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
8-PowerSOIC (0.154, 3.90mm Width)
供应商器件包装
8-LFPAK-iV
Current - Continuous Drain (Id) @ 25℃
55A Ta
Power Dissipation (Max)
30W Tc
操作温度
150°C TJ
包装
Tape & Reel (TR)
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
3.6mOhm @ 27.5A, 10V
输入电容(Ciss)(Max)@Vds
5.18pF @ 10V
门极电荷(Qg)(最大)@Vgs
33nC @ 4.5V
漏源电压 (Vdss)
30V
RoHS状态
ROHS3 Compliant
HAT2165N-EL-E拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics








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