Rochester Electronics, LLC IPB022N04LGATMA1
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IPB022N04LGATMA1
2071-IPB022N04LGATMA1
晶体管 - FET,MOSFET - 单个
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
大陆
立即发货

OPTLMOS N-CHANNEL POWER MOSFET
1最小包装量--
IPB022N04LGATMA1详情
Rochester Electronics, LLC IPB022N04LGATMA1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
供应商器件包装
D2PAK (TO-263AB)
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
2V @ 95μA
Current - Continuous Drain (Id) @ 25℃
90A Tc
Drive Voltage (Max Rds On, Min Rds On)
4.5V 10V
Power Dissipation (Max)
167W Tc
系列
OptiMOS™
操作温度
-55°C~175°C TJ
包装
Tape & Reel (TR)
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
2.2mOhm @ 90A, 10V
输入电容(Ciss)(Max)@Vds
13pF @ 20V
门极电荷(Qg)(最大)@Vgs
166nC @ 10V
漏源电压 (Vdss)
40V
Vgs(最大值)
±20V
RoHS状态
ROHS3 Compliant
IPB022N04LGATMA1拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics








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