Rochester Electronics, LLC IPB26CN10NGATMA1
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IPB26CN10NGATMA1
2071-IPB26CN10NGATMA1
晶体管 - FET,MOSFET - 单个
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
大陆
立即发货

OPTLMOS N-CHANNEL POWER MOSFET
1最小包装量--
IPB26CN10NGATMA1详情
Rochester Electronics, LLC IPB26CN10NGATMA1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
供应商器件包装
D2PAK (TO-263AB)
Current - Continuous Drain (Id) @ 25℃
35A Tc
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
71W Tc
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
4V @ 39μA
操作温度
-55°C~175°C TJ
包装
Tape & Reel (TR)
系列
OptiMOS™
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
26mOhm @ 35A, 10V
输入电容(Ciss)(Max)@Vds
2.07pF @ 50V
门极电荷(Qg)(最大)@Vgs
31nC @ 10V
漏源电压 (Vdss)
100V
Vgs(最大值)
±20V
RoHS状态
Non-RoHS Compliant
IPB26CN10NGATMA1拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics








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