Rochester Electronics, LLC IPB65R380C6ATMA1
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IPB65R380C6ATMA1
2071-IPB65R380C6ATMA1
晶体管 - FET,MOSFET - 单个
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
大陆
立即发货

OPTLMOS N-CHANNEL POWER MOSFET
1最小包装量--
IPB65R380C6ATMA1详情
Rochester Electronics, LLC IPB65R380C6ATMA1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
供应商器件包装
D2PAK (TO-263AB)
Current - Continuous Drain (Id) @ 25℃
10.6A Tc
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
83W Tc
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
3.5V @ 320μA
操作温度
-55°C~150°C TJ
包装
Tape & Reel (TR)
系列
CoolMOS™
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
380mOhm @ 3.2A, 10V
输入电容(Ciss)(Max)@Vds
710pF @ 100V
门极电荷(Qg)(最大)@Vgs
39nC @ 10V
漏源电压 (Vdss)
650V
Vgs(最大值)
±20V
RoHS状态
ROHS3 Compliant
IPB65R380C6ATMA1拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics








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