Rochester Electronics, LLC IPB65R660CFDATMA1
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IPB65R660CFDATMA1
2071-IPB65R660CFDATMA1
晶体管 - FET,MOSFET - 单个
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
大陆
立即发货

OPTLMOS N-CHANNEL POWER MOSFET
1最小包装量--
IPB65R660CFDATMA1详情
Rochester Electronics, LLC IPB65R660CFDATMA1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
安装类型
表面贴装
供应商器件包装
D2PAK (TO-263AB)
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25℃
6A Tc
Power Dissipation (Max)
62.5W Tc
包装
Tape & Reel (TR)
操作温度
-55°C~150°C TJ
系列
CoolMOS™
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
660mOhm @ 2.1A, 10V
不同 Id 时 Vgs(th)(最大值)
4.5V @ 200μA
输入电容(Ciss)(Max)@Vds
615pF @ 100V
门极电荷(Qg)(最大)@Vgs
22nC @ 10V
漏源电压 (Vdss)
650V
Vgs(最大值)
±20V
RoHS状态
ROHS3 Compliant
IPB65R660CFDATMA1拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics








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