Rochester Electronics, LLC IPC60N04S406ATMA1
- 收藏
- 对比
IPC60N04S406ATMA1
2071-IPC60N04S406ATMA1
晶体管 - FET,MOSFET - 单个
8-PowerVDFN
大陆
立即发货

OPTLMOS N-CHANNEL POWER MOSFET
1最小包装量--
IPC60N04S406ATMA1详情
Rochester Electronics, LLC IPC60N04S406ATMA1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
8-PowerVDFN
安装类型
表面贴装
供应商器件包装
PG-TDSON-8-23
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
4V @ 30μA
Power Dissipation (Max)
63W Tc
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25℃
60A Tc
系列
Automotive, AEC-Q101, OptiMOS™
包装
Tape & Reel (TR)
操作温度
-55°C~175°C TJ
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
6mOhm @ 30A, 10V
输入电容(Ciss)(Max)@Vds
2.65pF @ 25V
门极电荷(Qg)(最大)@Vgs
33nC @ 10V
漏源电压 (Vdss)
40V
Vgs(最大值)
±20V
RoHS状态
Non-RoHS Compliant
IPC60N04S406ATMA1拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics







哦! 它是空的。