Rochester Electronics, LLC IPD100N06S403ATMA1
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IPD100N06S403ATMA1
2071-IPD100N06S403ATMA1
晶体管 - FET,MOSFET - 单个
TO-252-3, DPak (2 Leads + Tab), SC-63
大陆
立即发货

OPTLMOS N-CHANNEL POWER MOSFET
1最小包装量--
IPD100N06S403ATMA1详情
Rochester Electronics, LLC IPD100N06S403ATMA1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-252-3, DPak (2 Leads + Tab), SC-63
供应商器件包装
PG-TO252-3-11
Current - Continuous Drain (Id) @ 25℃
100A Tc
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
150W Tc
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
4V @ 90μA
操作温度
-55°C~175°C TJ
包装
Tape & Reel (TR)
系列
OptiMOS™
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
3.5mOhm @ 100A, 10V
输入电容(Ciss)(Max)@Vds
10.4pF @ 25V
门极电荷(Qg)(最大)@Vgs
128nC @ 10V
漏源电压 (Vdss)
60V
Vgs(最大值)
±20V
RoHS状态
ROHS3 Compliant
IPD100N06S403ATMA1拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics








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