Rochester Electronics, LLC IPD122N10N3GBTMA1
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IPD122N10N3GBTMA1
2071-IPD122N10N3GBTMA1
晶体管 - FET,MOSFET - 单个
TO-252-3, DPak (2 Leads + Tab), SC-63
大陆
立即发货

OPTLMOS N-CHANNEL POWER MOSFET
1最小包装量--
IPD122N10N3GBTMA1详情
Rochester Electronics, LLC IPD122N10N3GBTMA1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-252-3, DPak (2 Leads + Tab), SC-63
供应商器件包装
PG-TO252-3
Power Dissipation (Max)
94W Tc
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
3.5V @ 46μA
Current - Continuous Drain (Id) @ 25℃
59A Tc
Drive Voltage (Max Rds On, Min Rds On)
6V 10V
包装
Tape & Reel (TR)
系列
OptiMOS™
操作温度
-55°C~175°C TJ
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
12.2mOhm @ 46A, 10V
输入电容(Ciss)(Max)@Vds
2.5pF @ 50V
门极电荷(Qg)(最大)@Vgs
35nC @ 10V
漏源电压 (Vdss)
100V
Vgs(最大值)
±20V
RoHS状态
ROHS3 Compliant
IPD122N10N3GBTMA1拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics








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