Rochester Electronics, LLC IPD50R1K4CEBTMA1
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IPD50R1K4CEBTMA1
2071-IPD50R1K4CEBTMA1
晶体管 - FET,MOSFET - 单个
TO-252-3, DPak (2 Leads + Tab), SC-63
大陆
立即发货

OPTLMOS N-CHANNEL POWER MOSFET
1最小包装量--
IPD50R1K4CEBTMA1详情
Rochester Electronics, LLC IPD50R1K4CEBTMA1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-252-3, DPak (2 Leads + Tab), SC-63
安装类型
表面贴装
供应商器件包装
PG-TO252-3
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
3.5V @ 70μA
Power Dissipation (Max)
25W Tc
Drive Voltage (Max Rds On, Min Rds On)
13V
Current - Continuous Drain (Id) @ 25℃
3.1A Tc
系列
CoolMOS™ CE
包装
Tape & Reel (TR)
操作温度
-55°C~150°C TJ
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
1.4Ohm @ 900mA, 13V
输入电容(Ciss)(Max)@Vds
178pF @ 100V
门极电荷(Qg)(最大)@Vgs
1nC @ 10V
漏源电压 (Vdss)
500V
Vgs(最大值)
±20V
RoHS状态
ROHS3 Compliant
IPD50R1K4CEBTMA1拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics








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