Rochester Electronics, LLC IPD60R1K0CEATMA1
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IPD60R1K0CEATMA1
2071-IPD60R1K0CEATMA1
晶体管 - FET,MOSFET - 单个
TO-252-3, DPak (2 Leads + Tab), SC-63
大陆
立即发货

COOLMOS N-CHANNEL POWER MOSFET
1最小包装量--
IPD60R1K0CEATMA1详情
Rochester Electronics, LLC IPD60R1K0CEATMA1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-252-3, DPak (2 Leads + Tab), SC-63
供应商器件包装
TO-252-3
Current - Continuous Drain (Id) @ 25℃
4.3A Tc
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
37W Tc
操作温度
-40°C~150°C TJ
包装
Tape & Reel (TR)
系列
CoolMOS™ CE
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
1Ohm @ 1.5A, 10V
不同 Id 时 Vgs(th)(最大值)
3.5V @ 130μA
输入电容(Ciss)(Max)@Vds
280pF @ 100V
门极电荷(Qg)(最大)@Vgs
13nC @ 10V
漏源电压 (Vdss)
600V
Vgs(最大值)
±20V
RoHS状态
ROHS3 Compliant
IPD60R1K0CEATMA1拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics








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