Rochester Electronics, LLC IPI023NE7N3 G
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IPI023NE7N3 G
2071-IPI023NE7N3 G
晶体管 - FET,MOSFET - 单个
TO-262-3 Long Leads, I2Pak, TO-262AA
大陆
立即发货

OPTLMOS N-CHANNEL POWER MOSFET
1最小包装量--
IPI023NE7N3 G详情
Rochester Electronics, LLC IPI023NE7N3 G重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
通孔
包装/外壳
TO-262-3 Long Leads, I2Pak, TO-262AA
供应商器件包装
PG-TO262-3
Current - Continuous Drain (Id) @ 25℃
120A Tc
Power Dissipation (Max)
300W Tc
操作温度
-55°C~175°C TJ
包装
Tube
系列
OptiMOS™
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
2.3mOhm @ 100A, 10V
不同 Id 时 Vgs(th)(最大值)
3.8V @ 273μA
输入电容(Ciss)(Max)@Vds
14.4pF @ 37.5V
门极电荷(Qg)(最大)@Vgs
206nC @ 10V
漏源电压 (Vdss)
75V
RoHS状态
Non-RoHS Compliant
IPI023NE7N3 G拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics







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