Rochester Electronics, LLC IPI100N04S4H2AKSA1
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IPI100N04S4H2AKSA1
2071-IPI100N04S4H2AKSA1
晶体管 - FET,MOSFET - 单个
TO-262-3 Long Leads, I2Pak, TO-262AA
大陆
立即发货

OPTLMOS N-CHANNEL POWER MOSFET
1最小包装量--
IPI100N04S4H2AKSA1详情
Rochester Electronics, LLC IPI100N04S4H2AKSA1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-262-3 Long Leads, I2Pak, TO-262AA
安装类型
通孔
供应商器件包装
PG-TO262-3
Current - Continuous Drain (Id) @ 25℃
100A Tc
Drive Voltage (Max Rds On, Min Rds On)
10V
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
4V @ 70μA
Power Dissipation (Max)
115W Tc
系列
OptiMOS™
包装
Tube
操作温度
-55°C~175°C TJ
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
2.7mOhm @ 100A, 10V
输入电容(Ciss)(Max)@Vds
7.18pF @ 25V
门极电荷(Qg)(最大)@Vgs
90nC @ 10V
漏源电压 (Vdss)
40V
Vgs(最大值)
±20V
RoHS状态
ROHS3 Compliant
IPI100N04S4H2AKSA1拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics







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