Rochester Electronics, LLC IPP065N04N G
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IPP065N04N G
2071-IPP065N04N G
晶体管 - FET,MOSFET - 单个
TO-220-3
大陆
立即发货

N-CHANNEL POWER MOSFET
1最小包装量--
IPP065N04N G详情
Rochester Electronics, LLC IPP065N04N G重要参数规格及、参数值,及相似型号如下:
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- 参数名参数值全选
安装类型
通孔
包装/外壳
TO-220-3
供应商器件包装
PG-TO220-3
Current - Continuous Drain (Id) @ 25℃
50A Tc
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
68W Tc
操作温度
-55°C~175°C TJ
包装
Tube
系列
OptiMOS™
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
6.5mOhm @ 50A, 10V
不同 Id 时 Vgs(th)(最大值)
4V @ 200μA
输入电容(Ciss)(Max)@Vds
2.8pF @ 20V
门极电荷(Qg)(最大)@Vgs
34nC @ 10V
漏源电压 (Vdss)
40V
Vgs(最大值)
±20V
RoHS状态
Non-RoHS Compliant
IPP065N04N G拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics








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