Rochester Electronics, LLC IPW50R190CEFKSA1
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IPW50R190CEFKSA1
2071-IPW50R190CEFKSA1
晶体管 - FET,MOSFET - 单个
TO-247-3
大陆
立即发货

N-CHANNEL POWER MOSFET
1最小包装量--
IPW50R190CEFKSA1详情
Rochester Electronics, LLC IPW50R190CEFKSA1重要参数规格及、参数值,及相似型号如下:
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- 参数名参数值全选
安装类型
通孔
包装/外壳
TO-247-3
供应商器件包装
PG-TO247-3
Drive Voltage (Max Rds On, Min Rds On)
13V
Power Dissipation (Max)
127W Tc
Current - Continuous Drain (Id) @ 25℃
18.5A Tc
操作温度
-55°C~150°C TJ
包装
Tube
系列
CoolMOS™
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
190mOhm @ 6.2A, 13V
不同 Id 时 Vgs(th)(最大值)
3.5V @ 510μA
输入电容(Ciss)(Max)@Vds
1.137pF @ 100V
门极电荷(Qg)(最大)@Vgs
47.2nC @ 10V
漏源电压 (Vdss)
500V
Vgs(最大值)
±20V
场效应管特性
超级交界处
RoHS状态
ROHS3 Compliant
IPW50R190CEFKSA1拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics








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