Rochester Electronics, LLC IPW65R190E6FKSA1
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IPW65R190E6FKSA1
2071-IPW65R190E6FKSA1
晶体管 - FET,MOSFET - 单个
TO-247-3
大陆
立即发货

N-CHANNEL POWER MOSFET
1最小包装量--
IPW65R190E6FKSA1详情
Rochester Electronics, LLC IPW65R190E6FKSA1重要参数规格及、参数值,及相似型号如下:
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- 参数名参数值全选
安装类型
通孔
包装/外壳
TO-247-3
供应商器件包装
PG-TO247-3
Current - Continuous Drain (Id) @ 25℃
20.2A Tc
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
151W Tc
操作温度
-55°C~150°C TJ
包装
Tube
系列
CoolMOS™
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
190mOhm @ 7.3A, 10V
不同 Id 时 Vgs(th)(最大值)
3.5V @ 730μA
输入电容(Ciss)(Max)@Vds
1.62pF @ 100V
门极电荷(Qg)(最大)@Vgs
73nC @ 10V
漏源电压 (Vdss)
650V
Vgs(最大值)
±20V
RoHS状态
ROHS3 Compliant
IPW65R190E6FKSA1拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics








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