Rochester Electronics, LLC IRF8306MTRPBF
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IRF8306MTRPBF
2071-IRF8306MTRPBF
晶体管 - FET,MOSFET - 单个
DirectFET™ Isometric MX
大陆
立即发货

POWER, N-CHANNEL, MOSFET
1最小包装量--
IRF8306MTRPBF详情
Rochester Electronics, LLC IRF8306MTRPBF重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
DirectFET™ Isometric MX
供应商器件包装
DIRECTFET™ MX
Current - Continuous Drain (Id) @ 25℃
23A Ta 140A Tc
Drive Voltage (Max Rds On, Min Rds On)
4.5V 10V
Power Dissipation (Max)
2.1W Ta 75W Tc
操作温度
-40°C~150°C TJ
包装
Tape & Reel (TR)
系列
HEXFET®
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
2.5mOhm @ 23A, 10V
不同 Id 时 Vgs(th)(最大值)
2.35V @ 100μA
输入电容(Ciss)(Max)@Vds
4.11pF @ 15V
门极电荷(Qg)(最大)@Vgs
38nC @ 4.5V
漏源电压 (Vdss)
30V
Vgs(最大值)
±20V
场效应管特性
Schottky Diode (Body)
RoHS状态
ROHS3 Compliant
IRF8306MTRPBF拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics








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