Rochester Electronics, LLC IRFHS8342TR2PBF
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IRFHS8342TR2PBF
2071-IRFHS8342TR2PBF
晶体管 - FET,MOSFET - 单个
6-PowerVDFN
大陆
立即发货

HEXFET POWER MOSFET
1最小包装量--
IRFHS8342TR2PBF详情
Rochester Electronics, LLC IRFHS8342TR2PBF重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
6-PowerVDFN
供应商器件包装
PG-TSDSON-6
Current - Continuous Drain (Id) @ 25℃
8.8A Ta 19A Tc
包装
Tape & Reel (TR)
系列
HEXFET®
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
16mOhm @ 8.5A, 10V
不同 Id 时 Vgs(th)(最大值)
2.35V @ 25μA
输入电容(Ciss)(Max)@Vds
600pF @ 25V
门极电荷(Qg)(最大)@Vgs
8.7nC @ 10V
漏源电压 (Vdss)
30V
RoHS状态
ROHS3 Compliant
IRFHS8342TR2PBF拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics








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