Rochester Electronics, LLC IRFS31N20DPBF
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IRFS31N20DPBF
2071-IRFS31N20DPBF
晶体管 - FET,MOSFET - 单个
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
大陆
立即发货

HEXFET N-CHANNEL POWER MOSFET
1最小包装量--
IRFS31N20DPBF详情
Rochester Electronics, LLC IRFS31N20DPBF重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
供应商器件包装
D2PAK
Current - Continuous Drain (Id) @ 25℃
31A Tc
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
3.1W Ta 200W Tc
操作温度
-55°C~175°C TJ
包装
Tube
系列
HEXFET®
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
82mOhm @ 18A, 10V
不同 Id 时 Vgs(th)(最大值)
5.5V @ 250μA
输入电容(Ciss)(Max)@Vds
2.37pF @ 25V
门极电荷(Qg)(最大)@Vgs
107nC @ 10V
漏源电压 (Vdss)
200V
Vgs(最大值)
±30V
RoHS状态
Non-RoHS Compliant
IRFS31N20DPBF拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics








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