Rochester Electronics, LLC IRFS7762PBF

包装/外壳

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

安装类型

表面贴装

供应商器件包装

D2PAK (TO-263AB)

Power Dissipation (Max)

140W Tc

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

3.7V @ 100μA

Drive Voltage (Max Rds On, Min Rds On)

6V 10V

Current - Continuous Drain (Id) @ 25℃

85A Tc

包装

Tube

系列

HEXFET®

操作温度

-55°C~175°C TJ

零件状态

Obsolete

湿度敏感性等级(MSL)

1 (Unlimited)

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

6.7mOhm @ 51A, 10V

输入电容(Ciss)(Max)@Vds

4.44pF @ 25V

门极电荷(Qg)(最大)@Vgs

130nC @ 10V

漏源电压 (Vdss)

75V

Vgs（最大值）

±20V

RoHS状态

ROHS3 Compliant