Rochester Electronics, LLC IRL2910SPBF
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IRL2910SPBF
2071-IRL2910SPBF
晶体管 - FET,MOSFET - 单个
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
大陆
立即发货

HEXFET POWER MOSFET
1最小包装量--
IRL2910SPBF详情
Rochester Electronics, LLC IRL2910SPBF重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
供应商器件包装
D2PAK
Current - Continuous Drain (Id) @ 25℃
55A Tc
Drive Voltage (Max Rds On, Min Rds On)
4V 10V
Power Dissipation (Max)
3.8W Ta 200W Tc
操作温度
-55°C~175°C TJ
包装
Tube
系列
HEXFET®
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
26mOhm @ 29A, 10V
不同 Id 时 Vgs(th)(最大值)
2V @ 250μA
输入电容(Ciss)(Max)@Vds
3.7pF @ 25V
门极电荷(Qg)(最大)@Vgs
140nC @ 5V
漏源电压 (Vdss)
100V
Vgs(最大值)
±16V
RoHS状态
ROHS3 Compliant
IRL2910SPBF拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics








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