Rochester Electronics, LLC IRLR8259PBF
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IRLR8259PBF
2071-IRLR8259PBF
晶体管 - FET,MOSFET - 单个
TO-252-3, DPak (2 Leads + Tab), SC-63
大陆
立即发货

HEXFET POWER MOSFET
1最小包装量--
IRLR8259PBF详情
Rochester Electronics, LLC IRLR8259PBF重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-252-3, DPak (2 Leads + Tab), SC-63
安装类型
表面贴装
供应商器件包装
D-Pak
Current - Continuous Drain (Id) @ 25℃
57A Tc
Power Dissipation (Max)
48W Tc
Drive Voltage (Max Rds On, Min Rds On)
4.5V 10V
系列
HEXFET®
包装
Tube
操作温度
-55°C~175°C TJ
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
8.7mOhm @ 21A, 10V
不同 Id 时 Vgs(th)(最大值)
2.35V @ 25μA
输入电容(Ciss)(Max)@Vds
900pF @ 13V
门极电荷(Qg)(最大)@Vgs
10nC @ 4.5V
漏源电压 (Vdss)
25V
Vgs(最大值)
±20V
RoHS状态
ROHS3 Compliant
IRLR8259PBF拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics








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