Rochester Electronics, LLC MTB30P06VT4G
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MTB30P06VT4G
2071-MTB30P06VT4G
晶体管 - FET,MOSFET - 单个
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
大陆
立即发货

P-CHANNEL POWER MOSFET
1最小包装量--
MTB30P06VT4G详情
Rochester Electronics, LLC MTB30P06VT4G重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
安装类型
表面贴装
供应商器件包装
D2PAK
Power Dissipation (Max)
3W Ta 125W Tc
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25℃
30A Tc
包装
Tape & Reel (TR)
操作温度
-55°C~175°C TJ
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
P-Channel
Rds On(Max)@Id,Vgs
80mOhm @ 15A, 10V
不同 Id 时 Vgs(th)(最大值)
4V @ 250μA
输入电容(Ciss)(Max)@Vds
2.19pF @ 25V
门极电荷(Qg)(最大)@Vgs
80nC @ 10V
漏源电压 (Vdss)
60V
Vgs(最大值)
±15V
RoHS状态
ROHS3 Compliant
MTB30P06VT4G拓展信息
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics







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